Zeige Ergebnisse 641 - 660 von 781
2001
Madzulis I, Muiznieks A, Mühlbauer A, Krauze A. Microscopic model of crystal growth using the mean field approximation. in Proceedings of the International Colloquium Modelling for Saving Resources: Riga, May 17 - 18, 2001. Riga: University of Latvia. 2001. S. 6
Mühlbauer A, Muiznieks A, Raming G, Ratnieks G. 2D and 3D Numerical Modelling of FZ Large Silicon Single Crystal Growth: Relation between Growth Process and Crystal Quality. in Proceedings of the International Colloquium Modelling for Saving Resources: Riga, May 17 - 18, 2001. Riga: University of Latvia. 2001
Mühlbauer A, Muiznieks A, Wetzel T, Rudevičs A. Mathematical modelling of the industrial CZ crystal growth: melt hydrodynamics control by imposed magnetic fields. in Proceedings of the International Colloquium Modelling for Saving Resources: Riga, May 17 - 18, 2001. Riga: University of Latvia. 2001
Muiznieks A, Raming G, Mühlbauer A, Ratnieks G. Numerical 3D study of the rotational striations in FZ-grown crystal. in Modeling in crystal growth: proceedings of the Third International Workshop on Modeling in Crystal Growth, Hauppauge, New York, USA, 18 - 20 October 2000. Amsterdam: Elsevier. 2001. S. 21-22
Muiznieks A, Raming G, Mühlbauer A. Numerical investigation of the influence of EM-Fields on fluid motion and resistivity distribution during Floating-Zone (FZ) growth of large silicon single crystals. in Modeling in crystal growth: proceedings of the Third International Workshop on Modeling in Crystal Growth, Hauppauge, New York, USA, 18 - 20 October 2000. Amsterdam: Elsevier. 2001. S. 35-36
Muiznieks A, Buligins L, Krauze A, Mühlbauer A. Simulation of CZ single crystal growth from Si-Ge solution. in Proceedings of the International Colloquium Modelling for Saving Resources: Riga, May 17 - 18, 2001. Riga: University of Latvia. 2001
Muiznieks A, Raming G, Mühlbauer A, Virbulis J, Hanna B, von Ammon W. Stress-induced dislocation generation in large FZ- and CZ-silicon single crystals - numerical model and qualitative considerations. in Modeling in crystal growth: proceedings of the Third International Workshop on Modeling in Crystal Growth, Hauppauge, New York, USA, 18 - 20 October 2000. Amsterdam: Elsevier. 2001. S. 33-34
Muižnieks A, Raming G, Mühlbauer A, Virbulis J, Hanna B, Ammon WV. Stress-induced dislocation generation in large FZ- and CZ-silicon single crystals - Numerical model and qualitative considerations. Journal of crystal growth. 2001 Aug;230(1-2):305-313. Epub 2001 Jul 10. doi: 10.1016/S0022-0248(01)01322-7
Nacke B, Wrona E. Analyse und Optimierung des Energieverbrauchs von induktiven Schmiede-Erwärmern. in Workshop Reihe Elektroprozesstechnik: elektromagnetische Verfahrenstechniken : induktives Erwärmen und Schmelzen, dielektrische Erwärmung, elektromagnetische Beeinflussung ; 18. - 19. Okt. 2001, Seminar- und Ferienhaus "Zur Talsperre" Ilmenau, OT Heyda. Ilmenau. 2001. 10
Nacke B, Behrens T, Baake E, Blinov Y, Lopukh D, Petchenkov A et al. Transverse flux heating in modern energy saving lines for metal rolling and treatment. in Proceedings of the International Colloquium Modelling for Saving Resources: Riga, May 17 - 18, 2001. Riga: University of Latvia. 2001. S. 589-596
Nauvertat G, Falter-Braun P, Mühlbauer A, Nacke B, Nikanorov A. Optimierte Auslegung von induktiven Querfeld-Banderwärmern. Metall. 2001;55(12):51-55.
Nauvertat G. Optimiertes Design industrieller induktiver Querfeld-Banderwärmungsanlagen. Düsseldorf: VDI-Verl, 2001. 143 S. (Fortschritt-Berichte VDI).
Nikanorov A, Baake E. International Seminar on Heating by Internal Sources in Padua/Italy. Elektrowärme international (EWI). 2001;59(4):159.
Raming G. Modellierung des industriellen FZ-Prozesses zur Züchtung von Silizium-Einkristallen. Düsseldorf: VDI-Verl, 2001. 159 S. (Fortschritt-Berichte VDI).
Raming G, Muižnieks A, Mühlbauer A. Numerical investigation of the influence of EM-fields on fluid motion and resistivity distribution during floating-zone growth of large silicon single crystals. Journal of crystal growth. 2001 Aug;230(1-2):108-117. Epub 2001 Jul 10. doi: 10.1016/S0022-0248(01)01323-9
Ratnieks G, Muižnieks A, Mühlbauer A, Raming G. Numerical 3D study of FZ growth: Dependence on growth parameters and melt instability. Journal of crystal growth. 2001 Aug;230(1-2):48-56. Epub 2001 Jul 10. doi: 10.1016/S0022-0248(01)01318-5
Trümmann H, Nacke B, Storch G. Forschungsprojekt "Thermophysikalische Eigenschaften metallischer und keramischer Werkstoffe". Elektrowärme international (EWI). 2001;59(4):149-155.
Virbulis J, Wetzel T, Muiznieks A, Hanna B, Dornberger E, Tomzig E et al. Numerical investigation of silicon melt flow in large diameter CZ-crystal growth under the influence of steady and dynamic magnetic fields. Journal of crystal growth. 2001 Aug;230(1-2):92-99. doi: 10.1016/S0022-0248(01)01321-5
Virbulis J, Wetzel T, Muiznieks A, Mühlbauer A, von Ammon W, Dornberger E et al. Numerical investigation of Si melt flow in large diameter CZ crucibles under the influence of various AC and DC fields. in Modeling in crystal growth: proceedings of the Third International Workshop on Modeling in Crystal Growth, Hauppauge, New York, USA, 18 - 20 October 2000. Amsterdam: Elsevier. 2001. S. 31-32
Vogt M. Einsatz des Kaltwand-Induktions-Tiegelofens zum Schmelzen und Gießen von TiAl-Legierungen. Düsseldorf: VDI-Verl, 2001. (Fortschritt-Berichte VDI).
