Stress-induced dislocation generation in large FZ- and CZ-silicon single crystals - Numerical model and qualitative considerations

verfasst von: A. Muižnieks, G. Raming, A. Mühlbauer, J. Virbulis, B. Hanna, W. V. Ammon
Abstract: When growing silicon crystals with higher diameter (presently up to 300 mm) the thermal stresses and possible dislocation generation in single crystals become a serious problem for both FZ- and CZ-methods. A two-dimensional problem oriented code for the FEM-package ANSYS has been developed to calculate the temperature field in the growing crystal considering radiation exchange with reflectors and environment and thermal stresses. Comparing calculated stresses with critical stresses, the dislocated zone is determined. A qualitative concept for the occurrence of dislocations using the metastable state is developed. In a parametric study for different thermal boundary conditions and crystal geometries, the thermal stresses are calculated and are discussed. From this, some hints on how to reduce stress and avoid dislocation generation are deduced.
Organisationseinheit(en): Institut für Elektroprozesstechnik
Externe Organisation(en): University of Latvia
Siltronic AG
Typ: Konferenzaufsatz in Fachzeitschrift
Journal: Journal of crystal growth
Band: 230
Seiten: 305-313
Anzahl der Seiten: 9
ISSN: 0022-0248
Publikationsdatum: 08.2001
Publikationsstatus: Veröffentlicht
Peer-reviewed: Ja
ASJC Scopus Sachgebiete: Physik der kondensierten Materie, Anorganische Chemie, Werkstoffchemie
Elektronische Version(en): https://doi.org/10.1016/S0022-0248(01)01322-7 (Zugang: Geschlossen)

BibTeX

@article{0c3b523b50d444a2b8efbfa205ea0d9c,
title = "Stress-induced dislocation generation in large FZ- and CZ-silicon single crystals - Numerical model and qualitative considerations",
abstract = "When growing silicon crystals with higher diameter (presently up to 300 mm) the thermal stresses and possible dislocation generation in single crystals become a serious problem for both FZ- and CZ-methods. A two-dimensional problem oriented code for the FEM-package ANSYS has been developed to calculate the temperature field in the growing crystal considering radiation exchange with reflectors and environment and thermal stresses. Comparing calculated stresses with critical stresses, the dislocated zone is determined. A qualitative concept for the occurrence of dislocations using the metastable state is developed. In a parametric study for different thermal boundary conditions and crystal geometries, the thermal stresses are calculated and are discussed. From this, some hints on how to reduce stress and avoid dislocation generation are deduced.",
keywords = "A1. Computer simulation, A1. Stresses, A2. Czochralski method, A2. Floating zone technique, B2. Semiconducting silicon",
author = "A. Mui{\v z}nieks and G. Raming and A. M{\"u}hlbauer and J. Virbulis and B. Hanna and Ammon, {W. V.}",
note = "Copyright: Copyright 2007 Elsevier B.V., All rights reserved.",
year = "2001",
month = aug,
doi = "10.1016/S0022-0248(01)01322-7",
language = "English",
volume = "230",
pages = "305--313",
journal = "Journal of crystal growth",
issn = "0022-0248",
publisher = "Elsevier",
number = "1-2",
}