Numerical investigation of silicon melt flow in large diameter CZ-crystal growth under the influence of steady and dynamic magnetic fields

verfasst von: J. Virbulis, Th Wetzel, A. Muiznieks, B. Hanna, E. Dornberger, E. Tomzig, A. Mühlbauer, W. V. Ammon
Abstract: Turbulent silicon melt flows are studied in large diameter Czochralski crucibles under the influence of alternating, steady and combined magnetic fields. The investigations are based on the experimentally verified two-dimensional axisymmetric mathematical models. The influence of steady, alternating and combined magnetic fields on the flow pattern and temperature field is investigated. Global heat transfer and melt flow calculations are coupled and the influence of melt convection on the interface shape is studied and compared with experimental data.
Organisationseinheit(en): Institut für Elektroprozesstechnik
Externe Organisation(en): Siltronic AG
Typ: Konferenzaufsatz in Fachzeitschrift
Journal: Journal of crystal growth
Band: 230
Seiten: 92-99
Anzahl der Seiten: 8
ISSN: 0022-0248
Publikationsdatum: 08.2001
Publikationsstatus: Veröffentlicht
Peer-reviewed: Ja
ASJC Scopus Sachgebiete: Physik der kondensierten Materie, Anorganische Chemie, Werkstoffchemie
Elektronische Version(en): https://doi.org/10.1016/S0022-0248(01)01321-5 (Zugang: Geschlossen)

BibTeX

@article{12aa1d7efa1142379a4a9178e49fd892,
title = "Numerical investigation of silicon melt flow in large diameter CZ-crystal growth under the influence of steady and dynamic magnetic fields",
abstract = "Turbulent silicon melt flows are studied in large diameter Czochralski crucibles under the influence of alternating, steady and combined magnetic fields. The investigations are based on the experimentally verified two-dimensional axisymmetric mathematical models. The influence of steady, alternating and combined magnetic fields on the flow pattern and temperature field is investigated. Global heat transfer and melt flow calculations are coupled and the influence of melt convection on the interface shape is studied and compared with experimental data.",
keywords = "A1. Fluid flows, A1. Heat transfer, A1. Magnetic fields, A2. Czochralski method, B2. Semiconducting silicon",
author = "J. Virbulis and Th Wetzel and A. Muiznieks and B. Hanna and E. Dornberger and E. Tomzig and A. M{\"u}hlbauer and Ammon, {W. V.}",
note = "Funding Information: The authors would like to thank O. Gr{\"a}bner and G. M{\"u}ller for the experimental results which were obtained in cooperation with Wacker Siltronic AG and Fraunhofer-Institute, IIS-B, Department of Crystal Growth, Erlangen, Germany. The work was supported by the German Federal Ministry of Education, Science, Research and Technology under Contract Nr. 01M2973A. The authors alone are responsible for the content of this publication. Copyright: Copyright 2007 Elsevier B.V., All rights reserved.",
year = "2001",
month = aug,
doi = "10.1016/S0022-0248(01)01321-5",
language = "English",
volume = "230",
pages = "92--99",
journal = "Journal of crystal growth",
issn = "0022-0248",
publisher = "Elsevier",
number = "1-2",
}