Numerical model of turbulent CZ melt flow in the presence of AC and CUSP magnetic fields and its verification in a laboratory facility

verfasst von: Th Wetzel, A. Muiznieks, A. Mühlbauer, Y. Gelfgat, L. Gorbunov, J. Virbulis, E. Tomzig, W. V. Ammon
Abstract: The paper describes a numerical simulation tool for heat and mass transfer processes in large diameter CZ crucibles under the influence of several non-rotating AC and CUSP magnetic fields. Such fields are expected to provide an additional means to influence the melt behaviour, particularly in the industrial growth of large diameter silicon crystals. The simulation tool is based on axisymmetric 2D models for the AC and CUSP magnetic fields in the whole CZ facility and turbulent hydrodynamics, temperature and mass transport in the melt under the influence of the electromagnetic fields. The simulation tool is verified by comparisons to experimental results from a laboratory CZ setup with eutectics InGaSn model melt.
Organisationseinheit(en): Institut für Elektroprozesstechnik
Externe Organisation(en): University of Latvia
Siltronic AG
Typ: Konferenzaufsatz in Fachzeitschrift
Journal: Journal of crystal growth
Band: 230
Seiten: 81-91
Anzahl der Seiten: 11
ISSN: 0022-0248
Publikationsdatum: 08.2001
Publikationsstatus: Veröffentlicht
Peer-reviewed: Ja
ASJC Scopus Sachgebiete: Physik der kondensierten Materie, Anorganische Chemie, Werkstoffchemie
Ziele für nachhaltige Entwicklung: SDG 9 – Industrie, Innovation und Infrastruktur
Elektronische Version(en): https://doi.org/10.1016/S0022-0248(01)01316-1 (Zugang: Geschlossen)

BibTeX

@article{fde82c4fc5b24158846e6770a186b300,
title = "Numerical model of turbulent CZ melt flow in the presence of AC and CUSP magnetic fields and its verification in a laboratory facility",
abstract = "The paper describes a numerical simulation tool for heat and mass transfer processes in large diameter CZ crucibles under the influence of several non-rotating AC and CUSP magnetic fields. Such fields are expected to provide an additional means to influence the melt behaviour, particularly in the industrial growth of large diameter silicon crystals. The simulation tool is based on axisymmetric 2D models for the AC and CUSP magnetic fields in the whole CZ facility and turbulent hydrodynamics, temperature and mass transport in the melt under the influence of the electromagnetic fields. The simulation tool is verified by comparisons to experimental results from a laboratory CZ setup with eutectics InGaSn model melt.",
keywords = "A1. Fluid flows, A1. Heat transfer, A1. Magnetic fields, A2. Czochralski method, B2. Semiconducting silicon",
author = "Th Wetzel and A. Muiznieks and A. M{\"u}hlbauer and Y. Gelfgat and L. Gorbunov and J. Virbulis and E. Tomzig and Ammon, {W. V.}",
note = "Funding Information: This paper is written in the frame of the close co-operation between Wacker Siltronic AG, the Institute of Physics at the University of Latvia in Riga, where the experimental setup is designed and operated, and the Institute for Electroheat at the University of Hannover, Germany, where the numerical modeling system is developed, implemented, tested and used for studies of the industrial CZ growth of large diameter silicon crystals. The work is sponsored by the German Federal Ministry of Education, Science, Research and Technology under Contract Nr. 01 M 2973 A. The authors alone are responsible for the content of this publication. Copyright: Copyright 2007 Elsevier B.V., All rights reserved.",
year = "2001",
month = aug,
doi = "10.1016/S0022-0248(01)01316-1",
language = "English",
volume = "230",
pages = "81--91",
journal = "Journal of crystal growth",
issn = "0022-0248",
publisher = "Elsevier",
number = "1-2",
}