Numerical modelling of the microscopic inhomogeneities during FZ silicon growth

verfasst von: A. Mühlbauer, A. Muiznieks, G. Raming, H. Riemann, A. Lüdge
Abstract: Transient axisymmetric numerical calculations of the hydrodynamic, temperature and solute concentration fields have been performed by means of FEM for the needle-eye FZ Silicon single-crystal growth process (diameter 4″) to analyse the microscopic inhomogeneities. The rotation of the single crystal and feed rod, the buoyancy, Marangoni and electromagnetic (EM) forces in the melt are taken into account. Axisymmetric velocity oscillations caused by hydrodynamic instabilities are considered and calculated numerically. Two mechanisms of the oscillating dopant incorporation in the crystal are investigated: (1) the direct influence of the transient velocity field on the concentration field due to convective solute transport and (2) the influence of the oscillating temperature field on the local growth rate and as a consequence on the oscillating dopant segregation process at the growth interface. It is shown that for the considered experimental set-up the first mechanism dominates for the microscopic inhomogeneities. The calculated oscillations of the dopant concentration in the grown crystal (striations) are compared to spreading resistance measurements.
Organisationseinheit(en): Institut für Elektroprozesstechnik
Externe Organisation(en): Leibniz-Institut für Kristallzüchtung (IKZ)
Typ: Artikel
Journal: Journal of crystal growth
Band: 198-199
Seiten: 107-113
Anzahl der Seiten: 7
ISSN: 0022-0248
Publikationsdatum: 03.1999
Publikationsstatus: Veröffentlicht
Peer-reviewed: Ja
ASJC Scopus Sachgebiete: Physik der kondensierten Materie, Anorganische Chemie, Werkstoffchemie
Elektronische Version(en): https://doi.org/10.1016/S0022-0248(98)01158-0 (Zugang: Geschlossen)

BibTeX

@article{de6784e34b5e4aada1288b589d64007d,
title = "Numerical modelling of the microscopic inhomogeneities during FZ silicon growth",
abstract = "Transient axisymmetric numerical calculations of the hydrodynamic, temperature and solute concentration fields have been performed by means of FEM for the needle-eye FZ Silicon single-crystal growth process (diameter 4″) to analyse the microscopic inhomogeneities. The rotation of the single crystal and feed rod, the buoyancy, Marangoni and electromagnetic (EM) forces in the melt are taken into account. Axisymmetric velocity oscillations caused by hydrodynamic instabilities are considered and calculated numerically. Two mechanisms of the oscillating dopant incorporation in the crystal are investigated: (1) the direct influence of the transient velocity field on the concentration field due to convective solute transport and (2) the influence of the oscillating temperature field on the local growth rate and as a consequence on the oscillating dopant segregation process at the growth interface. It is shown that for the considered experimental set-up the first mechanism dominates for the microscopic inhomogeneities. The calculated oscillations of the dopant concentration in the grown crystal (striations) are compared to spreading resistance measurements.",
keywords = "FZ silicon, Microscopic inhomogeneities, Numerical modelling, Transient velocity",
author = "A. M{\"u}hlbauer and A. Muiznieks and G. Raming and H. Riemann and A. L{\"u}dge",
note = "Funding Information: The authors are grateful for the support received from Wacker-Siltronic AG, Burghausen, Germany. Copyright: Copyright 2018 Elsevier B.V., All rights reserved.",
year = "1999",
month = mar,
doi = "10.1016/S0022-0248(98)01158-0",
language = "English",
volume = "198-199",
pages = "107--113",
journal = "Journal of crystal growth",
issn = "0022-0248",
publisher = "Elsevier",
number = "PART I",
}