System of Mathematical Models for the Analysis of Industrial FZ-Si-Crystal Growth Processes

verfasst von: Andris Muiznieks, Georg Raming, Alfred Mühlbauer
Abstract: A system of coupled mathematical models and the corresponding program package is developed to study the interface shape, heat transfer, thermal stresses, fluid flow as well as the transient dopant segregation in the floating zone (FZ) growth of large silicon crystals (∅≥100mm) grown by the needle-eye technique. The floating zone method with needle-eye technique is used to produce high-purity silicon single crystals for semiconductor devices to overcome the problems resulting from the use of crucibles. The high frequency electric current induced by the pancake induction coil, the temperature gradients and the feed/crystal rotation determine the free surface shape of the molten zone and cause the fluid motion. The quality of the growing crystal depends on the shape of the growth interface, the temperature gradients and corresponding thermal stresses in the single crystal, the fluid flow, and especially on the dopant segregation near the growth interface. From the calculated transient dopant concentration fields in the molten zone the macroscopic and microscopic resistivity distribution in the single crystal is derived. The numerical results of the resistivity distributions are compared with the resistivity distributions measured in the grown crystal.
Organisationseinheit(en): Institut für Elektroprozesstechnik
Typ: Artikel
Journal: Crystal research and technology
Band: 34
Seiten: 217-226
Anzahl der Seiten: 10
ISSN: 0232-1300
Publikationsdatum: 01.04.1999
Publikationsstatus: Veröffentlicht
Peer-reviewed: Ja
ASJC Scopus Sachgebiete: Allgemeine Chemie, Allgemeine Materialwissenschaften, Physik der kondensierten Materie
Elektronische Version(en): https://doi.org/10.1002/(sici)1521-4079(199902)34:2<217::aid-crat217>3.0.co;2-1 (Zugang: Geschlossen)

BibTeX

@article{726b18e9b4624354abb1aa0a8630bd7d,
title = "System of Mathematical Models for the Analysis of Industrial FZ-Si-Crystal Growth Processes",
abstract = "A system of coupled mathematical models and the corresponding program package is developed to study the interface shape, heat transfer, thermal stresses, fluid flow as well as the transient dopant segregation in the floating zone (FZ) growth of large silicon crystals (∅≥100mm) grown by the needle-eye technique. The floating zone method with needle-eye technique is used to produce high-purity silicon single crystals for semiconductor devices to overcome the problems resulting from the use of crucibles. The high frequency electric current induced by the pancake induction coil, the temperature gradients and the feed/crystal rotation determine the free surface shape of the molten zone and cause the fluid motion. The quality of the growing crystal depends on the shape of the growth interface, the temperature gradients and corresponding thermal stresses in the single crystal, the fluid flow, and especially on the dopant segregation near the growth interface. From the calculated transient dopant concentration fields in the molten zone the macroscopic and microscopic resistivity distribution in the single crystal is derived. The numerical results of the resistivity distributions are compared with the resistivity distributions measured in the grown crystal.",
keywords = "Crystal impurities, Finite element analysis, Hydrodynamic stability, Melt crystal growth",
author = "Andris Muiznieks and Georg Raming and Alfred M{\"u}hlbauer",
note = "Copyright: Copyright 2020 Elsevier B.V., All rights reserved.",
year = "1999",
month = apr,
day = "1",
doi = "10.1002/(sici)1521-4079(199902)34:2<217::aid-crat217>3.0.co;2-1",
language = "English",
volume = "34",
pages = "217--226",
journal = "Crystal research and technology",
issn = "0232-1300",
publisher = "John Wiley and Sons Inc.",
number = "2",
}