Unsteady 3D LES modeling of turbulent melt flow with AC travelling EM fields for a laboratory model of the CZ silicon crystal growth system

verfasst von

A. Krauze, A. Rudevičs, A. Muižnieks, A. Sabanskis, N. Jekabsons, B. Nacke

Abstract

A series of 3D LES calculations of turbulent melt flow and temperature distributions in an InGaSn laboratory model with a 20" crucible for industrial Czochralski silicon single-crystal growth is presented, in which the influence of the travelling AC EM field and crystal and crucible rotations on the melt flow is shown. The applied program package was developed on the basis of the open-source code library OpenFOAM. The calculated temperature and temperature fluctuation distributions give better agreement with the previously obtained experimental results than in the formerly published calculations with 2D axisymmetric RANS turbulence models.

Organisationseinheit(en)

Institut für Elektroprozesstechnik

Externe Organisation(en)

University of Latvia
Ventspils University College

Typ

Artikel

Journal

Magnetohydrodynamics

Band

45

Seiten

605-611

Anzahl der Seiten

7

ISSN

0024-998X

Publikationsdatum

2009

Publikationsstatus

Veröffentlicht

Peer-reviewed

Ja

ASJC Scopus Sachgebiete

Physik und Astronomie (insg.), Elektrotechnik und Elektronik

Elektronische Version(en)

https://doi.org/10.22364/mhd.45.4.15 (Zugang: Geschlossen)