Analysis of the dopant segregation effects at the floating zone growth of large silicon crystals

verfasst von: A. Mühlbauer, A. Muiznieks, J. Virbulis
Abstract: A computer simulation is carried out to study the dopant concentration fields in the molten zone and in the growing crystal for the floating zone (FZ) growth of large (> 100 mm) Si crystals with the needle-eye technique and with feed/crystal rotation. The mathematical model developed in the previous work is used to calculate the shape of the molten zone and the velocity field in the melt. The influence of melt convection on the dopant concentration field is considered. The significance of the rotation scheme of the feed rod and crystal on the dopant distribution is investigated. The calculated dopant concentration directly at the growth interface is used to determine the normalized lateral resistivity distribution in the single crystal. The calculated resistivity distributions are compared with lateral spreading resistivity measurements in the single crystal.
Organisationseinheit(en): Institut für Elektroprozesstechnik
Externe Organisation(en): University of Latvia
Typ: Artikel
Journal: Journal of crystal growth
Band: 180
Seiten: 372-380
Anzahl der Seiten: 9
ISSN: 0022-0248
Publikationsdatum: 10.1997
Publikationsstatus: Veröffentlicht
Peer-reviewed: Ja
ASJC Scopus Sachgebiete: Physik der kondensierten Materie, Anorganische Chemie, Werkstoffchemie
Elektronische Version(en): https://doi.org/10.1016/S0022-0248(97)00235-2 (Zugang: Geschlossen)

BibTeX

@article{09d9e13b8db14b88b7872129c6000d12,
title = "Analysis of the dopant segregation effects at the floating zone growth of large silicon crystals",
abstract = "A computer simulation is carried out to study the dopant concentration fields in the molten zone and in the growing crystal for the floating zone (FZ) growth of large (> 100 mm) Si crystals with the needle-eye technique and with feed/crystal rotation. The mathematical model developed in the previous work is used to calculate the shape of the molten zone and the velocity field in the melt. The influence of melt convection on the dopant concentration field is considered. The significance of the rotation scheme of the feed rod and crystal on the dopant distribution is investigated. The calculated dopant concentration directly at the growth interface is used to determine the normalized lateral resistivity distribution in the single crystal. The calculated resistivity distributions are compared with lateral spreading resistivity measurements in the single crystal.",
keywords = "Dopant concentration field, Finite-element method, Floating zone growth, Si crystal",
author = "A. M{\"u}hlbauer and A. Muiznieks and J. Virbulis",
note = "Funding Information: The authors are grateful for the support received from the Institute of Crystal Growth, Berlin, Germany for the experimental resistivity measurements. Copyright: Copyright 2018 Elsevier B.V., All rights reserved.",
year = "1997",
month = oct,
doi = "10.1016/S0022-0248(97)00235-2",
language = "English",
volume = "180",
pages = "372--380",
journal = "Journal of crystal growth",
issn = "0022-0248",
publisher = "Elsevier",
number = "3-4",
}